N-Channel Power MOSFET, QFET® series, featuring a 200V drain-source breakdown voltage and a continuous drain current of 19A. This surface-mount component offers a low drain-source on-resistance of 170mΩ. Designed for efficient switching, it has a turn-on delay time of 15ns and a fall time of 115ns. Packaged in a D2PAK for thermal performance, it operates from -55°C to 150°C and is RoHS compliant.
PackageD2PAK
Current Rating19A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB19N20CTM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 170mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 170mR |
| Element Configuration | Single |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 200V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB19N20CTM Datasheet
Download the complete datasheet for Onsemi FQB19N20CTM to view detailed technical specifications.
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