Power Field-Effect Transistor, 22A I(D), 100V, 0.125ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
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| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
| RoHS | Yes |
| Eccn Code | EAR99 |
| HTS Code | 8541.29.00.95 |
| REACH | Compliant |
| Military Spec | False |
