The FQB27N25TM_AM002 is a 250V N-CHANNEL MOSFET with a continuous drain current of 25.5A. It features a maximum power dissipation of 3.13W and a drain to source breakdown voltage of 250V. The device is packaged in a TO-263-3 case and is lead free. It is suitable for surface mount applications and has a maximum operating temperature range of -40°C to 150°C.
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Onsemi FQB27N25TM_AM002 technical specifications.
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 25.5A |
| Current Rating | 25.5A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 250V |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Power Dissipation | 3.13W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 180W |
| Rds On Max | 110mR |
| Series | QFET™ |
| DC Rated Voltage | 250V |
| RoHS | Compliant |
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