P-channel Power MOSFET featuring a -60V drain-source breakdown voltage and a continuous drain current of 27A. This surface-mount device offers a maximum drain-source on-resistance of 70mΩ and a typical threshold voltage of -4V. With a maximum power dissipation of 120W and an operating temperature range of -55°C to 175°C, it is packaged in a D2PAK (TO-263) for tape and reel delivery. Key switching characteristics include a turn-on delay time of 18ns and a fall time of 90ns.
PackageTO-263
Current Rating-27A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB27P06TM technical specifications.
General
Package/Case
TO-263
Continuous Drain Current (ID)
27A
Current Rating
-27A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
70MR
Dual Supply Voltage
60V
Element Configuration
Single
Fall Time
90ns
Gate to Source Voltage (Vgs)
25V
Height
4.83mm
Input Capacitance
1.4nF
Lead Free
Lead Free
Length
10.67mm
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
120W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
800
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
3.75W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Termination
SMD/SMT
Threshold Voltage
-4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
18ns
DC Rated Voltage
-60V
Weight
1.31247g
Width
9.65mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQB27P06TM Datasheet
Download the complete datasheet for Onsemi FQB27P06TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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