N-Channel MOSFET, 200V Drain-Source Voltage, 31A Continuous Drain Current, and 75mΩ Rds On Max. This single-element, surface-mount transistor features a TO-263-3 package and a maximum power dissipation of 180W. Operating across a temperature range of -55°C to 150°C, it offers fast switching with turn-on delay times of 40ns and fall times of 115ns. Packaged in tape and reel, this RoHS compliant component is ideal for demanding applications.
PackageTO-263-3
Current Rating31A
MountingSurface Mount
Power3.13W
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Technical Specifications
Onsemi FQB34N20TM_AM002 technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 31A |
| Current Rating | 31A |
| Drain to Source Voltage (Vdss) | 200V |
| Element Configuration | Single |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.1nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Power Dissipation | 3.13W |
| Rds On Max | 75mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 40ns |
| DC Rated Voltage | 200V |
| Weight | 1.31247g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB34N20TM_AM002 Datasheet
Download the complete datasheet for Onsemi FQB34N20TM_AM002 to view detailed technical specifications.
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