P-Channel MOSFET featuring a -100V drain-source breakdown voltage and a continuous drain current of 33.5A. This device offers a low drain-source on-resistance of 60mΩ at a nominal Vgs of 4V. Designed for surface mounting in a TO-263 package, it operates within a temperature range of -55°C to 175°C with a maximum power dissipation of 3.75W. Key switching characteristics include a turn-on delay time of 25ns and a fall time of 210ns.
PackageTO-263
Current Rating-34A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB34P10TM technical specifications.
General
| Package/Case | TO-263 |
| Continuous Drain Current (ID) | 33.5A |
| Current Rating | -34A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 60mR |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 60mR |
| Element Configuration | Single |
| Fall Time | 210ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.83mm |
| Input Capacitance | 2.91nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 60mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | -4V |
| Turn-Off Delay Time | 160ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | -100V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB34P10TM Datasheet
Download the complete datasheet for Onsemi FQB34P10TM to view detailed technical specifications.
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