N-Channel Power MOSFET, QFET® series, featuring a 100V drain-to-source breakdown voltage and a continuous drain current of 43.5A. This surface-mount device in a D2PAK package offers a low on-resistance of 39mΩ at 10Vgs. With a maximum power dissipation of 3.75W and an operating temperature range of -55°C to 175°C, it is suitable for demanding applications. Packaged in an 800-piece tape and reel, this RoHS compliant component boasts fast switching times with a turn-on delay of 19ns and a fall time of 100ns.
PackageD2PAK
Current Rating43.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQB44N10TM technical specifications.
General
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 43.5A |
| Current Rating | 43.5A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 39mR |
| Drain to Source Voltage (Vdss) | 100V |
| Element Configuration | Single |
| Fall Time | 100ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 4.83mm |
| Input Capacitance | 1.8nF |
| Lead Free | Lead Free |
| Length | 10.67mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3.75W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.75W |
| Radiation Hardening | No |
| Rds On Max | 39mR |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 90ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 100V |
| Weight | 1.31247g |
| Width | 9.65mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB44N10TM Datasheet
Download the complete datasheet for Onsemi FQB44N10TM to view detailed technical specifications.
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