P-Channel Power MOSFET designed for efficient power switching applications. Features a low on-resistance of 26 mΩ at a continuous drain current of -47 A and a drain-source voltage of -60 V. Encased in a D2PAK (TO-263) package, this device offers a maximum operating temperature of 175°C. Ideal for high-power switching and amplification circuits requiring robust performance.
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Technical Specifications
Onsemi FQB47P06TM-AM002 technical specifications.
General
| Max Operating Temperature | 175 |
| Number of Terminals | 2 |
| Terminal Position | SINGLE |
| JEDEC Package Code | TO-263AB |
| Number of Elements | 1 |
Compliance
| Lead Free | Yes |
| REACH | not_compliant |
| Military Spec | False |
Datasheet
Onsemi FQB47P06TM-AM002 Datasheet
Download the complete datasheet for Onsemi FQB47P06TM-AM002 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.