P-channel MOSFET, 250V drain-source breakdown voltage, 4A continuous drain current. Features 1.63 Ohm drain-source resistance at 10Vgs, 420pF input capacitance, and 75W maximum power dissipation. Packaged in a TO-263-3 (D2PAK) surface-mount case, this RoHS compliant component operates from -55°C to 150°C. Turn-on delay is 9.5ns, turn-off delay is 14ns, and fall time is 27ns.
PackageTO-263-3
Current Rating-4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB4P25TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 1.63R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 75W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 2.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 9.5ns |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB4P25TM Datasheet
Download the complete datasheet for Onsemi FQB4P25TM to view detailed technical specifications.
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