The FQB4P40TM is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of -400V and a continuous drain current of 3.5A. The device is packaged in a TO-263-3 case and is suitable for surface mount applications. The FQB4P40TM is RoHS compliant and lead free.
PackageTO-263-3
Current Rating-3.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB4P40TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | -3.5A |
| Drain to Source Breakdown Voltage | -400V |
| Drain to Source Resistance | 2.44R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 37ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 680pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 3.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
| DC Rated Voltage | -400V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB4P40TM Datasheet
Download the complete datasheet for Onsemi FQB4P40TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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