The FQB5N20TM is a surface-mount N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 200V and a drain to source resistance of 1.2Ω. The device is lead-free and RoHS compliant, packaged in a TO-263-3 case with a tape and reel packaging. It is rated for a maximum power dissipation of 52W and has a maximum Rds on of 1.2Ω.
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| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | 4.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 270pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 52W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 9ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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