The FQB5P10TM is a P-CHANNEL MOSFET with a maximum operating temperature of 175°C and a minimum operating temperature of -55°C. It has a continuous drain current of 4.5A and a drain to source breakdown voltage of -100V. The device is packaged in a TO-263-3 and is lead free and RoHS compliant. It has a maximum power dissipation of 40W and a power dissipation of 3.75W. The FQB5P10TM is suitable for use in high-temperature applications.
PackageTO-263-3
Current Rating-4.5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQB5P10TM technical specifications.
General
| Package/Case | TO-263-3 |
| Continuous Drain Current (ID) | 4.5A |
| Current Rating | -4.5A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 1.05R |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 250pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 40W |
| Mount | Surface Mount |
| Package Quantity | 800 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 3.75W |
| Rds On Max | 1.05R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 12ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQB5P10TM Datasheet
Download the complete datasheet for Onsemi FQB5P10TM to view detailed technical specifications.
No datasheet is available for this part.
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