N-Channel Power MOSFET, QFET® series, featuring a 600V drain-to-source breakdown voltage and a continuous drain current of 7.5A. This surface-mount device offers a low 1.2Ω drain-to-source resistance (Rds On Max) and a maximum power dissipation of 147W. Packaged in a D2PAK for tape and reel distribution, it operates within a temperature range of -55°C to 150°C and is RoHS compliant. Key switching characteristics include a turn-on delay time of 16.5ns and a fall time of 64.5ns.
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Onsemi FQB8N60CTM technical specifications.
| Package/Case | D2PAK |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 1.2R |
| Drain to Source Voltage (Vdss) | 600V |
| Element Configuration | Single |
| Fall Time | 64.5ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 4.83mm |
| Input Capacitance | 1.255nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 147W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 81ns |
| Turn-On Delay Time | 16.5ns |
| DC Rated Voltage | 600V |
| Weight | 1.31247g |
| RoHS | Compliant |
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