The FQD10N20TF is an N-channel MOSFET with a drain to source breakdown voltage of 200V and a continuous drain current of 7.6A. It features a drain to source resistance of 360mR and a fall time of 50ns. The device is packaged in a TO-252-3 package and is designed for surface mount applications. The FQD10N20TF operates over a temperature range of -55°C to 150°C and is compliant with lead-free and RoHS regulations.
PackageTO-252-3
Current Rating7.6A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD10N20TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.6A |
| Current Rating | 7.6A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 360mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 670pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 51W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 26ns |
| DC Rated Voltage | 200V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD10N20TF Datasheet
Download the complete datasheet for Onsemi FQD10N20TF to view detailed technical specifications.
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