FQD12N20LTM

N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 200V drain-to-source breakdown voltage and 9A continuous drain current. This surface-mount device offers a low 280mΩ drain-to-source resistance at a nominal 2V gate-source voltage. Designed for efficient switching, it exhibits fast switching times with turn-on delay of 15ns and fall time of 120ns. Packaged in a DPAK for thermal performance, it operates from -55°C to 150°C with a maximum power dissipation of 55W.