N-Channel Power MOSFET, Logic Level, QFET® series, featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 115mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this single-element transistor operates from -55°C to 150°C with a 2.5W maximum power dissipation. Includes fast switching characteristics with 8ns turn-on delay and 40ns fall time.
PackageDPAK
Current Rating11A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD13N06LTM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
11A
Current Rating
11A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
115mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
115mR
Element Configuration
Single
Fall Time
40ns
Gate to Source Voltage (Vgs)
20V
Height
2.39mm
Input Capacitance
350pF
Lead Free
Lead Free
Length
6.73mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
115mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
2.5V
Turn-Off Delay Time
20ns
Turn-On Delay Time
8ns
DC Rated Voltage
60V
Weight
0.26037g
Width
6.22mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD13N06LTM Datasheet
Download the complete datasheet for Onsemi FQD13N06LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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