ONSEMI

FQD13N06LTM

Datasheet

N-Channel Power MOSFET, 60V, 11A, 115mR, DPAK, Logic Level

Onsemi

FQD13N06LTM

Name: FQD13N06LTM Onsemi
Brand: Onsemi
SKU: FQD13N06LTM

N-Channel Power MOSFET, 60V, 11A, 115mR, DPAK, Logic Level

N-Channel Power MOSFET, Logic Level, QFET® series, featuring 60V drain-source breakdown voltage and 11A continuous drain current. Offers a low 115mΩ maximum drain-source on-resistance. Designed for surface mounting in a DPAK package, this single-element transistor operates from -55°C to 150°C with a 2.5W maximum power dissipation. Includes fast switching characteristics with 8ns turn-on delay and 40ns fall time.

PackageDPAK

Current Rating11A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD13N06LTM technical specifications.

General

Package/Case	DPAK
Continuous Drain Current (ID)	11A
Current Rating	11A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	115mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	115mR
Element Configuration	Single
Fall Time	40ns
Gate to Source Voltage (Vgs)	20V
Height	2.39mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	6.73mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	115mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	2.5V
Turn-Off Delay Time	20ns
Turn-On Delay Time	8ns
DC Rated Voltage	60V
Weight	0.26037g
Width	6.22mm