N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-to-source breakdown voltage and 10A continuous drain current. This single-element MOSFET offers a low 180mΩ drain-to-source resistance (Rds On Max) and a 2V threshold voltage. Packaged in a DPAK surface-mount case, it operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching parameters include a 7.5ns turn-on delay and 22ns turn-off delay.
PackageDPAK
Current Rating10A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD13N10LTM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
10A
Current Rating
10A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
180mR
Drain to Source Voltage (Vdss)
100V
Element Configuration
Single
Fall Time
72ns
Gate to Source Voltage (Vgs)
20V
Height
2.3mm
Input Capacitance
520pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
180mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
2V
Turn-Off Delay Time
22ns
Turn-On Delay Time
7.5ns
DC Rated Voltage
100V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD13N10LTM Datasheet
Download the complete datasheet for Onsemi FQD13N10LTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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