ONSEMI

FQD13N10LTM

Datasheet

N-Channel MOSFET, 100V, 10A, 180mR, Logic Level, DPAK

Onsemi

FQD13N10LTM

Name: FQD13N10LTM Onsemi
Brand: Onsemi
SKU: FQD13N10LTM

N-Channel MOSFET, 100V, 10A, 180mR, Logic Level, DPAK

N-Channel Power MOSFET, Logic Level, QFET® series, featuring 100V drain-to-source breakdown voltage and 10A continuous drain current. This single-element MOSFET offers a low 180mΩ drain-to-source resistance (Rds On Max) and a 2V threshold voltage. Packaged in a DPAK surface-mount case, it operates from -55°C to 150°C with a maximum power dissipation of 2.5W. Key switching parameters include a 7.5ns turn-on delay and 22ns turn-off delay.

PackageDPAK

Current Rating10A

MountingSurface Mount

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Onsemi FQD13N10LTM technical specifications.

General

Package/Case	DPAK
Continuous Drain Current (ID)	10A
Current Rating	10A
Drain to Source Breakdown Voltage	100V
Drain to Source Resistance	180mR
Drain to Source Voltage (Vdss)	100V
Element Configuration	Single
Fall Time	72ns
Gate to Source Voltage (Vgs)	20V
Height	2.3mm
Input Capacitance	520pF
Lead Free	Lead Free
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.5W
Mount	Surface Mount
Number of Channels	1
Number of Elements	1
Package Quantity	1
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	180mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	2V
Turn-Off Delay Time	22ns
Turn-On Delay Time	7.5ns
DC Rated Voltage	100V
Weight	0.26037g
Width	6.1mm