
N-Channel Power MOSFET, DPAK package, featuring 250V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum drain-source on-resistance of 270mΩ at a nominal gate-source voltage of 4V. This single-element MOSFET boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Designed for surface mounting, it is supplied on a 2500-piece tape and reel.
Onsemi FQD16N25CTM technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 16A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 220mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 270mR |
| Element Configuration | Single |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 160W |
| Mount | Surface Mount |
| Nominal Vgs | 4V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 160W |
| Rds On Max | 270mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 250V |
| Weight | 0.26037g |
| Width | 6.1mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD16N25CTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
