N-Channel Power MOSFET, DPAK package, featuring 250V drain-source breakdown voltage and 16A continuous drain current. Offers a maximum drain-source on-resistance of 270mΩ at a nominal gate-source voltage of 4V. This single-element MOSFET boasts a maximum power dissipation of 160W and operates within a temperature range of -55°C to 150°C. Designed for surface mounting, it is supplied on a 2500-piece tape and reel.
PackageDPAK
Current Rating16A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD16N25CTM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
250V
Drain to Source Resistance
220mR
Drain to Source Voltage (Vdss)
250V
Drain-source On Resistance-Max
270mR
Element Configuration
Single
Fall Time
105ns
Gate to Source Voltage (Vgs)
30V
Height
2.3mm
Input Capacitance
1.08nF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
160W
Mount
Surface Mount
Nominal Vgs
4V
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
160W
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
4V
Turn-Off Delay Time
135ns
Turn-On Delay Time
15ns
DC Rated Voltage
250V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD16N25CTM Datasheet
Download the complete datasheet for Onsemi FQD16N25CTM to view detailed technical specifications.
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