The FQD1N60TM is a surface mount N-CHANNEL MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 30W and a maximum drain to source breakdown voltage of 600V. The device has a maximum current rating of 1A and a maximum drain to source resistance of 11.5 ohms. The FQD1N60TM is RoHS compliant and lead free.
PackageTO-252-3
Current Rating1A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD1N60TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1A |
| Current Rating | 1A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 11.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 150pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 30W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 11.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 7ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD1N60TM Datasheet
Download the complete datasheet for Onsemi FQD1N60TM to view detailed technical specifications.
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