The FQD1P50TF is a P-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 38W and a maximum current rating of 1.2A. The device is packaged in a TO-252-3 surface mount package and is lead free. The FQD1P50TF is RoHS compliant and has a maximum drain to source voltage of 500V and a maximum drain to source resistance of 10.5R.
PackageTO-252-3
Current Rating-1.2A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQD1P50TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | -1.2A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 10.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 10.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | -500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD1P50TF Datasheet
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