MOSFET P-CH 500V 1.2A DPAK
Onsemi FQD1P50TM technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.2A |
| Current Rating | -1.2A |
| Drain to Source Breakdown Voltage | -500V |
| Drain to Source Resistance | 10.5R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 30ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 38W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 10.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | -500V |
| RoHS | Compliant |
No datasheet is available for this part.
