FQD2N60CTF

600V N-CH MOSFET, 1.9A, 4.7R Rds(on), DPAK

N-channel MOSFET, 600V drain-source breakdown voltage, 1.9A continuous drain current, and 4.7 Ohm Rds On. Features a TO-252-3 (DPAK) surface mount package, 235pF input capacitance, and 44W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including 9ns turn-on delay and 28ns fall time. This RoHS compliant component is ideal for power switching applications.

PackageTO-252-3

Voltage650V

Current18A

Current Rating1.9A

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Technical Specifications

Onsemi FQD2N60CTF technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	1.9A
Current	18A
Current Rating	1.9A
Drain to Source Breakdown Voltage	600V
Drain to Source Resistance	4.7R
Drain to Source Voltage (Vdss)	600V
Fall Time	28ns
Gate to Source Voltage (Vgs)	30V
Height	2.3mm
Input Capacitance	235pF
Lead Free	Lead Free
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	44W
Mount	Surface Mount
Package Quantity	2000
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	4.7R
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	4V
Turn-Off Delay Time	24ns
Turn-On Delay Time	9ns
Voltage	650V
DC Rated Voltage	600V
Width	6.1mm