N-channel MOSFET, 600V drain-source breakdown voltage, 1.9A continuous drain current, and 4.7 Ohm Rds On. Features a TO-252-3 (DPAK) surface mount package, 235pF input capacitance, and 44W maximum power dissipation. Operates from -55°C to 150°C, with fast switching times including 9ns turn-on delay and 28ns fall time. This RoHS compliant component is ideal for power switching applications.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.9A |
| Current | 18A |
| Current Rating | 1.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.3mm |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 4.7R |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 24ns |
| Turn-On Delay Time | 9ns |
| Voltage | 650V |
| DC Rated Voltage | 600V |
| Width | 6.1mm |
| RoHS | Compliant |
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