The FQD2N60CTF_F080 is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a drain to source breakdown voltage of 600V and a drain to source resistance of 4.7R. The device can handle a continuous drain current of 1.9A and a maximum power dissipation of 2.5W. It has a fall time of 28ns and a turn-off delay time of 24ns.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD2N60CTF_F080 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 1.9A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.7R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 235pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 4.7R |
| Series | QFET™ |
| Turn-Off Delay Time | 24ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD2N60CTF_F080 Datasheet
Download the complete datasheet for Onsemi FQD2N60CTF_F080 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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