PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power35W
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Technical Specifications
Onsemi FQD3N50CTF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 25ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 365pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 35W |
| Rds On Max | 2.5R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD3N50CTF Datasheet
Download the complete datasheet for Onsemi FQD3N50CTF to view detailed technical specifications.
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