ONSEMI

FQD3N50CTM

500V N-CH MOSFET 2.5A, 2.1 Ohm, DPAK, SM

Onsemi

FQD3N50CTM

Name: FQD3N50CTM Onsemi
Brand: Onsemi
SKU: FQD3N50CTM

500V N-CH MOSFET 2.5A, 2.1 Ohm, DPAK, SM

N-channel MOSFET, 500V drain-source breakdown voltage, 2.5A continuous drain current, and 2.1 Ohm drain-source resistance. Features a TO-252-3 (DPAK) surface mount package with dimensions of 6.6mm length, 6.1mm width, and 2.3mm height. Offers fast switching with 10ns turn-on delay, 35ns turn-off delay, and 25ns fall time. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 35W.

PackageTO-252-3

MountingSurface Mount

PolarityN-CHANNEL

Power35W

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Technical Specifications

Onsemi FQD3N50CTM technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	2.5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	2.1R
Drain to Source Voltage (Vdss)	500V
Fall Time	25ns
Gate to Source Voltage (Vgs)	30V
Height	2.3mm
Input Capacitance	365pF
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	35W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	35W
Rds On Max	2.5R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	35ns
Turn-On Delay Time	10ns
Width	6.1mm