The FQD3N60CTM is a N-CHANNEL MOSFET with a Drain to Source Breakdown Voltage of 600V and a Continuous Drain Current of 2.4A. It has a Power Dissipation of 50W and a Max Operating Temperature of 150°C. The device is packaged in a TO-252 case and is RoHS Compliant. It is suitable for high-power applications requiring a high voltage and current rating.
PackageTO-252
PolarityN-CHANNEL
Power50W
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Technical Specifications
Onsemi FQD3N60CTM technical specifications.
General
| Package/Case | TO-252 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 2.8R |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 35ns |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD3N60CTM Datasheet
Download the complete datasheet for Onsemi FQD3N60CTM to view detailed technical specifications.
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