N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω, TO-252 3L (DPAK), 30000-TAPE REEL
Onsemi FQD3N60CTM_WS technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 3.4R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.26037g |
| RoHS | Compliant |
No datasheet is available for this part.
