Onsemi
FQD3N60CTM_WS
N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω, TO-252 3L (DPAK), 30000-TAPE REEL
PackageTO-252-3
MountingSurface Mount
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Technical Specifications
Onsemi FQD3N60CTM_WS technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 2.4A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 3.4R |
| Element Configuration | Single |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 565pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 3.4R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 35ns |
| Turn-On Delay Time | 12ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD3N60CTM_WS Datasheet
Download the complete datasheet for Onsemi FQD3N60CTM_WS to view detailed technical specifications.
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