The FQD4N25TF is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 37W and a maximum drain to source breakdown voltage of 250V. The device features a gate to source voltage of 30V and an input capacitance of 200pF. It is lead free and RoHS compliant.
PackageTO-252-3
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD4N25TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 1.75R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 22ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 200pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 37W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.75R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 6.4ns |
| DC Rated Voltage | 250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD4N25TF Datasheet
Download the complete datasheet for Onsemi FQD4N25TF to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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