FQD4N50TM

Datasheet

500V N-CH MOSFET, 2.6A, 2.7 Ohm RdsOn, TO-252

Onsemi

FQD4N50TM

Name: FQD4N50TM Onsemi
Brand: Onsemi
SKU: FQD4N50TM

500V N-CH MOSFET, 2.6A, 2.7 Ohm RdsOn, TO-252

N-channel MOSFET, 500V drain-source breakdown voltage, 2.6A continuous drain current, and 2.7 Ohm maximum drain-source on-resistance. This surface mount component features a TO-252-3 package, 45W maximum power dissipation, and operates within a temperature range of -55°C to 150°C. Key switching parameters include a 12ns turn-on delay and 20ns turn-off delay.

PackageTO-252-3

Current Rating2.6A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD4N50TM technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	2.6A
Current Rating	2.6A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	2.7R
Drain to Source Voltage (Vdss)	500V
Drain-source On Resistance-Max	2.7R
Element Configuration	Single
Fall Time	30ns
Gate to Source Voltage (Vgs)	30V
Height	2.3mm
Input Capacitance	460pF
Lead Free	Lead Free
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	45W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Radiation Hardening	No
Rds On Max	2.7R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	20ns
Turn-On Delay Time	12ns
DC Rated Voltage	500V
Weight	0.26037g
Width	6.1mm