The FQD4P25TM is a P-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.1A and a drain to source breakdown voltage of -250V. The device is packaged in a TO-252-3 package and is lead free and RoHS compliant. The FQD4P25TM is suitable for use in high-power applications where a low Rds(on) is required.
PackageTO-252-3
Current Rating-3.1A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQD4P25TM technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.1A |
| Current Rating | -3.1A |
| Drain to Source Breakdown Voltage | -250V |
| Drain to Source Resistance | 2.1R |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 27ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 420pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 2.1R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 14ns |
| DC Rated Voltage | -250V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD4P25TM Datasheet
Download the complete datasheet for Onsemi FQD4P25TM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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