ONSEMI

FQD5N50CTM

Datasheet

500V 4A N-CH MOSFET, 1.4R Rds On, TO-252

Onsemi

FQD5N50CTM

Name: FQD5N50CTM Onsemi
Brand: Onsemi
SKU: FQD5N50CTM

500V 4A N-CH MOSFET, 1.4R Rds On, TO-252

N-channel MOSFET, 500V Drain-Source Voltage (Vdss), 4A Continuous Drain Current (ID), and 1.4 Ohm Rds On Max. This surface mount device features a TO-252-3 (DPAK) package, 48W Max Power Dissipation, and a 150°C Max Operating Temperature. Optimized for switching applications with fast switching times including 12ns Turn-On Delay and 48ns Fall Time. RoHS compliant and lead-free.

PackageTO-252-3

Current Rating5A

MountingSurface Mount

PolarityN-CHANNEL

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Technical Specifications

Onsemi FQD5N50CTM technical specifications.

General

Package/Case	TO-252-3
Continuous Drain Current (ID)	4A
Current Rating	5A
Drain to Source Breakdown Voltage	500V
Drain to Source Resistance	1.4R
Drain to Source Voltage (Vdss)	500V
Fall Time	48ns
Gate to Source Voltage (Vgs)	30V
Height	2.3mm
Input Capacitance	625pF
Lead Free	Lead Free
Length	6.6mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	48W
Mount	Surface Mount
Package Quantity	2500
Packaging	Tape and Reel
Polarity	N-CHANNEL
Power Dissipation	2.5W
Rds On Max	1.4R
RoHS Compliant	Yes
Series	QFET®
Turn-Off Delay Time	50ns
Turn-On Delay Time	12ns
DC Rated Voltage	500V
Weight	0.26037g
Width	6.1mm