The FQD5N50TF is a surface mount N-CHANNEL MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 3.5A and a drain to source breakdown voltage of 500V. The device is lead free and RoHS compliant, packaged in a TO-252-3 package with a tape and reel packaging. The FQD5N50TF is suitable for high power applications due to its maximum power dissipation of 50W.
PackageTO-252-3
Current Rating3.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD5N50TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 3.5A |
| Current Rating | 3.5A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 1.8R |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 610pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 1.8R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| DC Rated Voltage | 500V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD5N50TF Datasheet
Download the complete datasheet for Onsemi FQD5N50TF to view detailed technical specifications.
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