N-Channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and 4.5A continuous drain current. This single-element MOSFET offers a low 1Ω drain-source on-resistance and is housed in a surface-mount DPAK package. Operating from -55°C to 150°C, it boasts a 2.5W maximum power dissipation and is RoHS compliant. Key switching characteristics include a 13ns turn-on delay and 38ns fall time.
PackageDPAK
Current Rating4.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQD6N40CTM technical specifications.
General
Package/Case
DPAK
Continuous Drain Current (ID)
4.5A
Current Rating
4.5A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
1R
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
1R
Element Configuration
Single
Fall Time
38ns
Gate to Source Voltage (Vgs)
30V
Height
2.3mm
Input Capacitance
625pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Channels
1
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
1R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
2V
Turn-Off Delay Time
21ns
Turn-On Delay Time
13ns
DC Rated Voltage
400V
Weight
0.26037g
Width
6.1mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQD6N40CTM Datasheet
Download the complete datasheet for Onsemi FQD6N40CTM to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
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