
N-Channel MOSFET, D-PAK package, 400V drain-source breakdown voltage, 4.5A continuous drain current, and 1 Ohm Rds On. Features include 38ns fall time, 21ns turn-off delay, and 13ns turn-on delay. Input capacitance is 625pF with a 30V gate-source voltage rating. This surface mount component offers 2.5W power dissipation and operates from -55°C to 150°C, presented on tape and reel.
Onsemi FQD6N40CTM-NBEA002 technical specifications.
| Package/Case | DPAK |
| Continuous Drain Current (ID) | 4.5A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 1R |
| Drain to Source Voltage (Vdss) | 400V |
| Fall Time | 38ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 625pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 1R |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 13ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD6N40CTM-NBEA002 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
