N-channel MOSFET, 250V Drain-Source Voltage (Vdss), 6.2A Continuous Drain Current (ID). Features 550mR maximum Drain-Source On-Resistance (Rds On) and 50W maximum power dissipation. Surface mount TO-252-3 package, operating temperature range of -55°C to 150°C. Includes 10ns turn-on delay, 11ns turn-off delay, and 42ns fall time. RoHS compliant and lead-free.
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Onsemi FQD8N25TF technical specifications.
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.2A |
| Current Rating | 6.2A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 550mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 42ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 2.4mm |
| Input Capacitance | 530pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Number of Channels | 1 |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 550mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 11ns |
| Turn-On Delay Time | 10ns |
| DC Rated Voltage | 250V |
| RoHS | Compliant |
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