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Technical Specifications
Onsemi FQD8P10TF technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.6A |
| Current Rating | -6.6A |
| Drain to Source Breakdown Voltage | -100V |
| Drain to Source Resistance | 530mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 470pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 44W |
| Mount | Surface Mount |
| Package Quantity | 2000 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 530mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 20ns |
| DC Rated Voltage | -100V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD8P10TF Datasheet
Download the complete datasheet for Onsemi FQD8P10TF to view detailed technical specifications.
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