The FQD8P10TM_SB82052 is a 100V N-Channel MOSFET with a maximum continuous drain current of 6.6A. It features a maximum power dissipation of 2.5W and an on-resistance of 530mR. The device is packaged in a TO-252-3 package and is designed for surface mount applications. It operates over a temperature range of -40°C to 150°C.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 6.6A |
| Drain to Source Voltage (Vdss) | 100V |
| Input Capacitance | 470pF |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Rds On Max | 530mR |
| Series | QFET™ |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQD8P10TM_SB82052 to view detailed technical specifications.
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