N-channel Power MOSFET, QFET™ series, featuring a 250V drain-to-source breakdown voltage and a continuous drain current of 7.4A. This surface-mount device offers a low on-resistance of 420mΩ and a maximum power dissipation of 2.5W. It operates within a temperature range of -55°C to 150°C and is packaged in a DPAK (TO-252-3) on a 2500-piece tape and reel. Key switching characteristics include a 13ns turn-on delay and a 45ns fall time.
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| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.4A |
| Current Rating | 7.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET™ |
| Threshold Voltage | 5V |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| DC Rated Voltage | 250V |
| Weight | 0.26037g |
| RoHS | Compliant |
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