N-Channel Power MOSFET, 250V Drain-Source Voltage, 7.4A Continuous Drain Current, 420mΩ Rds On Max. Features a TO-252-3 (DPAK) surface mount package, 55W maximum power dissipation, and 150°C maximum operating temperature. Designed for efficient switching with turn-on delay of 13ns and fall time of 45ns. Packaged on a 2500-unit tape and reel.
PackageTO-252-3
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Onsemi FQD9N25TM-F080 technical specifications.
General
| Package/Case | TO-252-3 |
| Continuous Drain Current (ID) | 7.4A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 420mR |
| Drain to Source Voltage (Vdss) | 250V |
| Element Configuration | Single |
| Fall Time | 45ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 700pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 55W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 420mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 25ns |
| Turn-On Delay Time | 13ns |
| Weight | 0.26037g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQD9N25TM-F080 Datasheet
Download the complete datasheet for Onsemi FQD9N25TM-F080 to view detailed technical specifications.
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