The FQH18N50V2 is a 500V N-CHANNEL MOSFET with a continuous drain current rating of 20A and a drain to source breakdown voltage of 500V. It features a TO-247-3 package with a through-hole mount and is lead free and RoHS compliant. The device operates over a temperature range of -55°C to 150°C and has a maximum power dissipation of 277W. The FQH18N50V2 has a gate to source voltage of 30V and an input capacitance of 3.29nF, with a fall time of 110ns and a turn-off delay time of 95ns.
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Onsemi FQH18N50V2 technical specifications.
| Package/Case | TO-247-3 |
| Continuous Drain Current (ID) | 20A |
| Current Rating | 20A |
| Drain to Source Breakdown Voltage | 500V |
| Drain to Source Resistance | 265mR |
| Drain to Source Voltage (Vdss) | 500V |
| Fall Time | 110ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 3.29nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 277W |
| Mount | Through Hole |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 277W |
| Rds On Max | 265mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 95ns |
| DC Rated Voltage | 500V |
| RoHS | Compliant |
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