
The FQH35N40 is a TO-247 packaged N-channel MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a continuous drain current of 35A and a drain to source breakdown voltage of 400V. The device has a drain to source resistance of 105mR and a power dissipation of 310W. The FQH35N40 is RoHS compliant and suitable for use in high-power applications.
Onsemi FQH35N40 technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 35A |
| Drain to Source Breakdown Voltage | 400V |
| Drain to Source Resistance | 105mR |
| Fall Time | 190ns |
| Gate to Source Voltage (Vgs) | 30V |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 310W |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 220ns |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQH35N40 to view detailed technical specifications.
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