N-Channel Power MOSFET, QFET® series, featuring a 1000V Drain-Source Breakdown Voltage and 8A Continuous Drain Current. This single-element transistor offers a low 1.45Ω Rds On and 225W Max Power Dissipation. Packaged in a TO-247 through-hole mount, it operates from -55°C to 150°C. Key switching parameters include a 50ns Turn-On Delay Time and 80ns Fall Time.
Onsemi FQH8N100C technical specifications.
| Package/Case | TO-247 |
| Continuous Drain Current (ID) | 8A |
| Drain to Source Breakdown Voltage | 1kV |
| Drain to Source Resistance | 1.45R |
| Drain to Source Voltage (Vdss) | 1kV |
| Element Configuration | Single |
| Fall Time | 80ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 20.82mm |
| Input Capacitance | 3.22nF |
| Length | 15.87mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 225W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 30 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 225W |
| Rds On Max | 1.45R |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 122ns |
| Turn-On Delay Time | 50ns |
| Weight | 6.39g |
| Width | 4.82mm |
| RoHS | Compliant |
No datasheet is available for this part.
