The FQI10N20CTU is a 200V N-CHANNEL MOSFET with a continuous drain current of 9.5A and a maximum power dissipation of 72W. It features a TO-262-3 package and is designed for through hole mounting. The device operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The FQI10N20CTU has a drain to source breakdown voltage of 200V and a drain to source resistance of 290mR.
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Onsemi FQI10N20CTU technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 290mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 72ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 510pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 72W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 72W |
| Rds On Max | 360mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 70ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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