Quick Jump:
Technical Specifications
Onsemi FQI10N60CTU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 9.5A |
| Current Rating | 9.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 730mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 77ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.04nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 156W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 730mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 144ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI10N60CTU Datasheet
Download the complete datasheet for Onsemi FQI10N60CTU to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
