The FQI19N20CTU is a high-power N-channel MOSFET from Onsemi with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a continuous drain current of 19A and a drain to source breakdown voltage of 200V. The device is packaged in a TO-262-3 case and is mounted through a hole. It is compliant with RoHS regulations and is lead-free.
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Onsemi FQI19N20CTU technical specifications.
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 19A |
| Current Rating | 19A |
| Drain to Source Breakdown Voltage | 200V |
| Drain to Source Resistance | 140mR |
| Drain to Source Voltage (Vdss) | 200V |
| Fall Time | 115ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Rds On Max | 170mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 135ns |
| DC Rated Voltage | 200V |
| RoHS | Compliant |
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