N-Channel Power MOSFET featuring 250V drain-source breakdown voltage and 25.5A continuous drain current. This QFET® series component offers a low 110mΩ drain-source on-resistance, enabling efficient power switching. Designed for through-hole mounting in an I2PAK package, it operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 180W. Key switching characteristics include a 32ns turn-on delay and 80ns turn-off delay.
PackageTO-262-3
Current Rating25.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQI27N25TU technical specifications.
General
| Package/Case | TO-262-3 |
| Continuous Drain Current (ID) | 25.5A |
| Current Rating | 25.5A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 250V |
| Drain-source On Resistance-Max | 110mR |
| Element Configuration | Single |
| Fall Time | 120ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 2.45nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 180W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 3.13W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 80ns |
| Turn-On Delay Time | 32ns |
| DC Rated Voltage | 250V |
| Weight | 2.084g |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQI27N25TU Datasheet
Download the complete datasheet for Onsemi FQI27N25TU to view detailed technical specifications.
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