P-channel Power MOSFET featuring a -200V drain-source breakdown voltage and a continuous drain current of -11.5A. This single-element transistor offers a maximum drain-source on-resistance of 470mΩ. Designed for through-hole mounting in a TO-220AB package, it operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 120W. Key switching characteristics include a turn-on delay of 20ns and a fall time of 60ns.
PackageTO-220AB
Current Rating-11.5A
MountingThrough Hole
PolarityP-CHANNEL
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Technical Specifications
Onsemi FQP12P20 technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 11.5A |
| Current Rating | -11.5A |
| Drain to Source Breakdown Voltage | -200V |
| Drain to Source Resistance | 470mR |
| Drain to Source Voltage (Vdss) | 200V |
| Drain-source On Resistance-Max | 470MR |
| Dual Supply Voltage | -200V |
| Element Configuration | Single |
| Fall Time | 60ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.2nF |
| Lead Free | Lead Free |
| Lead Pitch | 2.54mm |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 120W |
| Mount | Through Hole |
| Nominal Vgs | -5V |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 120W |
| Radiation Hardening | No |
| Rds On Max | 470mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Termination | Through Hole |
| Threshold Voltage | -5V |
| Turn-Off Delay Time | 40ns |
| Turn-On Delay Time | 20ns |
| DC Rated Voltage | -200V |
| Weight | 1.8g |
| Width | 4.7mm |
Compliance
| RoHS | Compliant |
Datasheet
Onsemi FQP12P20 Datasheet
Download the complete datasheet for Onsemi FQP12P20 to view detailed technical specifications.
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