N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 13.6A. This component offers a low drain-source on-resistance of 110mΩ. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. Key switching characteristics include an 8ns turn-on delay and a 40ns fall time.
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| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 13.6A |
| Current Rating | 13.6A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 110mR |
| Drain to Source Voltage (Vdss) | 60V |
| Drain-source On Resistance-Max | 110mR |
| Element Configuration | Single |
| Fall Time | 40ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 9.4mm |
| Input Capacitance | 350pF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 45W |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | QFET® |
| Threshold Voltage | 2.5V |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 8ns |
| DC Rated Voltage | 60V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
These are design resources that include the Onsemi FQP13N06L
onsemi product discontinuance notice PD24792XB for various MOSFETs and discrete parts. Includes last time buy (Dec 30, 2022) and ship dates (Jun 30, 2023) plus replacements.
