ONSEMI

FQP13N06L

N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220

Onsemi

FQP13N06L

Name: FQP13N06L Onsemi
Brand: Onsemi
SKU: FQP13N06L

N-Channel Logic Level MOSFET, 60V, 13.6A, 110mR, TO-220

N-Channel Power MOSFET, Logic Level, QFET® series, featuring a 60V drain-source breakdown voltage and a continuous drain current of 13.6A. This component offers a low drain-source on-resistance of 110mΩ. Designed for through-hole mounting in a TO-220AB package, it operates across a wide temperature range from -55°C to 175°C with a maximum power dissipation of 45W. Key switching characteristics include an 8ns turn-on delay and a 40ns fall time.

PackageTO-220AB

Current Rating13.6A

MountingThrough Hole

PolarityN-CHANNEL

Quick Jump:

Technical Specifications

Onsemi FQP13N06L technical specifications.

General

Package/Case	TO-220AB
Continuous Drain Current (ID)	13.6A
Current Rating	13.6A
Drain to Source Breakdown Voltage	60V
Drain to Source Resistance	110mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	110mR
Element Configuration	Single
Fall Time	40ns
Gate to Source Voltage (Vgs)	20V
Height	9.4mm
Input Capacitance	350pF
Lead Free	Lead Free
Length	10.1mm
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Max Power Dissipation	45W
Mount	Through Hole
Number of Channels	1
Number of Elements	1
Package Quantity	50
Packaging	Rail/Tube
Polarity	N-CHANNEL
Power Dissipation	45W
Rds On Max	110mR
Reach SVHC Compliant	No
RoHS Compliant	Yes
Series	QFET®
Threshold Voltage	2.5V
Turn-Off Delay Time	20ns
Turn-On Delay Time	8ns
DC Rated Voltage	60V
Weight	1.8g
Width	4.7mm