
N-Channel MOSFET, 250V Drain-Source Voltage, 15.6A Continuous Drain Current. Features 270mΩ Max Drain-Source On-Resistance, 139W Max Power Dissipation, and a TO-220AB through-hole package. Operates from -55°C to 150°C, with typical turn-on delay of 15ns and fall time of 105ns. Lead-free and RoHS compliant.
Onsemi FQP16N25C technical specifications.
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 15.6A |
| Current Rating | 16A |
| Drain to Source Breakdown Voltage | 250V |
| Drain to Source Resistance | 270mR |
| Drain to Source Voltage (Vdss) | 250V |
| Fall Time | 105ns |
| Gate to Source Voltage (Vgs) | 30V |
| Height | 9.4mm |
| Input Capacitance | 1.08nF |
| Lead Free | Lead Free |
| Length | 10.1mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 139W |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 139W |
| Rds On Max | 270mR |
| RoHS Compliant | Yes |
| Series | QFET® |
| Turn-Off Delay Time | 135ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 250V |
| Weight | 1.8g |
| Width | 4.7mm |
| RoHS | Compliant |
Download the complete datasheet for Onsemi FQP16N25C to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
