N-channel Power MOSFET, QFET® series, featuring a 400V drain-source breakdown voltage and a continuous drain current of 16A. This through-hole component offers a maximum drain-source on-resistance of 270mΩ. Designed for high-power applications, it has a maximum power dissipation of 170W and operates within a temperature range of -55°C to 150°C. The TO-220AB package ensures robust mounting.
PackageTO-220AB
Current Rating16A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Onsemi FQP17N40 technical specifications.
General
Package/Case
TO-220AB
Continuous Drain Current (ID)
16A
Current Rating
16A
Drain to Source Breakdown Voltage
400V
Drain to Source Resistance
270mR
Drain to Source Voltage (Vdss)
400V
Drain-source On Resistance-Max
270mR
Element Configuration
Single
Fall Time
105ns
Gate to Source Voltage (Vgs)
30V
Height
9.4mm
Input Capacitance
2.3nF
Lead Free
Lead Free
Length
10.1mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
170W
Mount
Through Hole
Nominal Vgs
5V
Number of Channels
1
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
170W
Radiation Hardening
No
Rds On Max
270mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
QFET®
Threshold Voltage
5V
Turn-Off Delay Time
90ns
Turn-On Delay Time
40ns
DC Rated Voltage
400V
Weight
1.8g
Width
4.7mm
Compliance
RoHS
Compliant
Datasheet
Onsemi FQP17N40 Datasheet
Download the complete datasheet for Onsemi FQP17N40 to view detailed technical specifications.
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